Influence of the carrier reservoir dimensionality on electron-electron scattering in quantum dot materials
نویسندگان
چکیده
We calculated Coulomb scattering rates from quantum dots (QDs) coupled to a 2D carrier reservoir and QDs coupled to a 3D reservoir. For this purpose, we used a microscopic theory in the limit of Born-Markov approximation, in which the numerical evaluation of high dimensional integrals is done via a quasi-Monte Carlo method. Via a comparison of the so determined scattering rates, we investigated the question whether scattering from 2D is generally more efficient than scattering from 3D. In agreement with experimental findings, we did not observe a significant reduction of the scattering efficiency of a QD directly coupled to a 3D reservoir. In turn, we found that 3D scattering benefits from it’s additional degree of freedom in the momentum space.
منابع مشابه
Quantum current modeling in nano-transistors with a quantum dot
Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterial’s in thecarbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductormaterials, from the elements in the periodic groups of II-VI, III-V or IV-VI, mainly thanks to impacts of quantum confinement QDs have unique optical properties such as brighter, highly pho...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملEffect of asymmetric quantum dot rings in electron transport through a quantum wire
The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...
متن کاملEffect of Temperature and Pressure on Correlation Energy in a Triplet State of a Two Electron Spherical Quantum Dot
The combined effect of hydrostatic pressure and temperature on correlation energy in a triplet state of two electron spherical quantum dot with square well potential is computed. The result is presented taking GaAs dot as an example. Our result shows the correlation energies are i)negative in the triplet state contrast to the singlet state ii) it increases with increase in pressure iii)further...
متن کامل